CEP15P15 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEP15P15/CEB15P15
CEF15P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP15P15
CEB15P15
CEF15P15
V_DSS
-150V
-150V
-150V
R_DS(ON)
0.24Ω
0.24Ω
0.24Ω
I_D
-15A
-15A
-15A ^d
@V_GS
-10V
-10V
-10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
V_DS
-150
V_GS
±20
I_D
-15
-9
I_DM ^e
- 60
96
P_D
0.77
TO-220F
-15 ^d
-9^d
- 60 ^d
34
0.27
Single Pulsed Avalanche Energy ^h
Single Pulsed Avalanche Current ^h
E_AS
250
I_AS
10
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.3
3.7
62.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2012.Nov
http://www.cetsemi.com