CEP13N10_08 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 12.8A, R_DS(ON) = 180mΩ @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
100
±20
12.8
50
65
0.43
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.3
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2008.Jan.
http://www.cetsemi.com