CEP110P03 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEP110P03/CEB110P03
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -105.5A, R_DS(ON) =5.8mΩ @V_GS = -10V.
R_DS(ON) =8.5mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
G
G
S
D
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
I_D
Drain Current-Pulsed ^a
I_DM
-30
±20
-105.5
-69
-422
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
96
0.77
Single Pulsed Avalanche Energy ^e
Single Pulsed Avalanche Current ^e
E_AS
612.5
I_AS
35
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.3
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Sep
http://www.cetsemi.com