CEP10N6_10 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP10N6/CEB10N6
CEF10N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N6
CEB10N6
CEF10N6
V_DSS
600V
600V
600V
R_DS(ON)
0.75Ω
0.75Ω
0.75Ω
I_D
10A
10A
10A ^d
@V_GS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
600
±30
10
10^d
6
6^d
40
40 ^d
166
50
1.3
0.4
Single Pulsed Avalanche Energy ^h
E_AS
187.5
Single Pulsed Avalanche Current ^h
I_AS
5
Operating and Store Temperature Range
T_J,T_stg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
2.5
62.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Feb
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