CEP10N65 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP10N65/CEB10N65
CEF10N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP10N65
CEB10N65
CEF10N65
V_DSS
650V
650V
650V
R_DS(ON)
0.85Ω
0.85Ω
0.85Ω
I_D
10A
10A
10A ^d
@V_GS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
650
±30
10
10^d
6
6^d
40
40 ^d
200
60
1.3
0.4
Single Pulsed Avalanche Energy ^h
E_AS
542
Single Pulsed Avalanche Current ^h
I_AS
8.5
Operating and Store Temperature Range
T_J,T_stg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
2.5
62.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 3. 2012.Nov.
http://www.cetsemi.com