CEP10N4 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP10N4/CEB10N4
CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N4
V_DSS
450V
R_DS(ON)
0.7Ω
I_D
10A
@V_GS
10V
CEB10N4
450V
0.7Ω
10A
10V
CEI10N4
450V 0.7Ω
10A
10V
CEF10N4
450V 0.7Ω
10A ^e 10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
G
G
G
D
D
S
S
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
450
V_GS
±30
I_D
10
10 ^e
I_DM ^f
40
40 ^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
125
45
P_D
1.0
0.36
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
E_AS
450
450
I_AS
10
10
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
2.8
62.5
65
Units
C/W
C/W
2002.September
4 - 50
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