CEP04N7 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP04N7/CEB04N7
CEI04N7/CEF04N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP04N7
CEB04N7
CEI04N7
CEF04N7
V_DSS
700V
700V
700V
700V
R_DS(ON)
3.5Ω
3.5Ω
3.5Ω
3.5Ω
I_D
@V_GS
4A
10V
4A
10V
4A
10V
4A ^d
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
G
G
G
D
D
S
S
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
V_DS
V_GS
I_D
I_DM ^e
P_D
700
±30
4
12
89
0.71
4^d
12 ^d
35
0.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
3.6
62.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.April
4 - 18
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