CEP04N65 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP04N65
CEB04N65
CEF04N65
V_DSS
R_DS(ON)
I_D
650V 2.8Ω
4A
@V_GS
10V
650V 2.8Ω
4A
10V
650V 2.8Ω
4A ^d
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
V_DS
650
V_GS
±30
I_D
4
2.4
I_DM ^e
16
104
P_D
0.83
TO-220F
4^d
2.4 ^d
16 ^d
35
0.28
Single Pulsed Avalanche Energy ^g
Single Pulsed Avalanche Current ^g
Operating and Store Temperature Range
E_AS
I_AS
T_J,T_stg
220
4.2
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
3.6
62.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Oct
http://www.cetsemi.com