CEP03N8 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP03N8/CEB03N8
CEF03N8
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP03N8
CEB03N8
CEF03N8
V_DSS
800V
800V
800V
R_DS(ON)
4.8Ω
4.8Ω
4.8Ω
I_D
@V_GS
3A
10V
3A
10V
3A ^d
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
Drain Current-Pulsed ^a
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
V_DS
800
V_GS
±30
I_D
3
2
I_DM ^e
12
125
P_D
0.8
TO-220F
3^d
2^d
12 ^d
47
0.3
Single Pulsed Avalanche Energy ^h
E_AS
32
Single Pulsed Avalanche Current ^h
I_AS
3
Operating and Store Temperature Range
T_J,T_stg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
3.2
62.5
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2012.July
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