CEP02N6_02 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP02N6/CEB02N6
CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6
V_DSS
R_DS(ON)
I_D
600V
5Ω
2A
@V_GS
10V
CEB02N6
600V
5Ω
2A
10V
CEI02N6
600V
5Ω
CEF02N6
600V
5Ω
2A
10V
2A ^e
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
G
G
G
G
D
S
S
D
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
V_GS
I_D
I_DM ^f
600
±30
2
2^e
6
6^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
60
29
P_D
0.48
0.23
Single Pulsed Avalanche Energy ^d
Repetitive Avalanche Current ^a
Repetitive Avalanche Energy ^a
E_AS
125
125
I_AR
2
2
E_AR
5.4
5.4
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
4.3
62.5
65
Units
V
V
A
A
W
W/ C
mJ
A
mJ
C
Units
C/W
C/W
2002.September
4-2
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