CEP02N6A Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6A
CEB02N6A
CEI02N6A
CEF02N6A
V_DSS
650V
650V
650V
650V
R_DS(ON)
7.5Ω
7.5Ω
7.5Ω
7.5Ω
I_D
1.5A
1.5A
1.5A
1.5A ^e
@V_GS
10V
10V
10V
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
G
G
G
D
D
S
S
S
D
S
S
CEB SERIES
CEI SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
650
V_GS
±30
I_D
1.5
1.5 ^e
I_DM ^f
4.5
4.5 ^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
42
28
P_D
0.33
0.22
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
E_AS
90
90
I_AS
1.4
1.4
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
4.5
62.5
65
Units
C/W
C/W
2003.December
4-6
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