CEP02N65G Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP02N65G/CEB02N65G
CEF02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N65G
CEB02N65G
CEF02N65G
V_DSS
650V
650V
650V
R_DS(ON)
5.5Ω
5.5Ω
5.5Ω
I_D
@V_GS
2A
10V
2A
10V
2A ^d
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
D
G
G
G
G
S
CEB SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
±30
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
Drain Current-Pulsed ^a
I_D
I_DM ^e
2
2^d
1
1^d
8
8^d
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
60
28
P_D
0.48
0.22
Single Pulsed Avalanche Energy ^g
Single Pulsed Avalanche Current ^g
Operating and Store Temperature Range
E_AS
I_AS
T_J,T_stg
11.25
1.5
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
4.5
62.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 6. 2011.Oct
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