CEP01N6 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP01N6/CEB01N6
CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP01N6
V_DSS
R_DS(ON)
I_D
650V
15Ω
1A
@V_GS
10V
CEB01N6
650V
15Ω
1A
10V
CEI01N6
650V
15Ω
CEF01N6
650V
15Ω
1A
10V
1A ^e
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
G
G
G
S
CEB SERIES
D
S
CEI SERIES
D
S
CEP SERIES
D
S
CEF SERIES
S
TO-263(DD-PAK)
TO-262(I2-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
V_GS
I_D
I_DM ^f
650
±30
1
1^e
4
4^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
36
28
P_D
0.29
0.22
Single Pulsed Avalanche Energy ^d
E_AS
60
Repetitive Avalanche Current
I_AS
0.8
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
4.5
62.5
65
Units
C/W
C/W
Rev 1. 2005.December
1
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