CEN7002A Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEN7002A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 0.25A, R_DS(ON) = 3 Ω @V_GS = 10V.
R_DS(ON) = 4 Ω @V_GS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-23-T package.
CEN7002A
SOT-23-T
D
G
S
G
Die upside up
SOT-23-T
package.
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
60
V_GS
±20
I_D
0.25
I_DM
1.3
Maximum Power Dissipation
P_D
0.35
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
350
Units
C/W
2004.December
7 - 30
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