CEM8958A Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor

CEM8958A
Dual Enhancement Mode Field Effect Transistor (N and P Channel) _PRELIMINARY
FEATURES
30V, 6.8A, R_DS(ON) = 28mΩ @V_GS = 10V.
R_DS(ON) = 42mΩ @V_GS = 4.5V.
-30V, -4.8A, R_DS(ON) = 58mΩ @V_GS = -10V.
R_DS(ON) = 85mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
5
D1 D1
D2
D2
8
7
6
5
SO-8
1
1
2
3
4
S1 G1
S2
G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
30
V_GS
±20
I_D
6.8
I_DM
27
P-Channel
-30
±20
-4.8
-19
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.Aug
http://www.cetsemi.com