CEM8206 Datasheet, PDF (1/5 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CEM8206
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 6A , RDS(ON)=20m Ω @VGS=4.5V.
RDS(ON)=30m Ω @VGS=2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
5
D1 D1 D2 D2
87 65
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
Ć12
V
Drain Current-Continuous^a
-Pulsed
ID
Ć⁶
A
IDM
Ć24
A
Drain-Source Diode Forward Current ^a
IS
6
A
Maximum Power Dissipation ^a
PD
2
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
RįJA
62.5
C/W
5-73