CEM7808 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Enhancement Mode Field Effect Transistor

CEM7808
Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY
FEATURES
30V, 6.2A, R_DS(ON) = 33mΩ @V_GS = 10V.
R_DS(ON) = 60mΩ @V_GS = 4.5V.
-30V, -4.8A, R_DS(ON) = 55mΩ @V_GS = -10V.
R_DS(ON) = 80mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
P1S
P2S
P1G
P2G
N1D
P1D
N2D
P2D
N1G
N2G
P1G
8
N1S
N2S
P1S N2D
P2S P2D
7
6
P2G
5
SO-8
1
1
2
3
4
N1G
N1D
P1D
N1S
N2S
N2G
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
-30
V_GS
±20
±20
Drain Current-Continuous
I_D
6.2
-4.8
Drain Current-Pulsed ^a
I_DM
24.8
-19.2
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Jun
http://www.cetsemi.com