CEM6659 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEM6659
Dual Enhancement Mode Field Effect Transistor (N and P Channel) _PRELIMINARY
FEATURES
60V, 4.1A, R_DS(ON) = 68mΩ @V_GS = 10V.
R_DS(ON) = 86mΩ @V_GS = 4.5V.
-60V, -3.1A, R_DS(ON) = 130mΩ @V_GS = -10V.
R_DS(ON) = 170mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
5
D1 D1
D2
D2
8
7
6
5
1
2
3
4
S1 G1
S2
G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
60
V_GS
±20
I_D
4.1
I_DM
15
P-Channel
-60
±20
-3.1
-12
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.May
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