CEM6607 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – Dual P-Channel Enhancement Mode Field Effect Transistor

CEM6607
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -3.8A, R_DS(ON) = 86mΩ @V_GS = -10V.
R_DS(ON) = 125mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
5
D1 D1 D2 D2
8765
SO-8
1
1
2
3
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-30
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
-3.8
I_DM
-15
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Oct
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