CEM4532 Datasheet, PDF (1/8 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

CEM4532
Jan. 2003
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
FEATURES
5
30V , 4.7A , RDS(ON)=55mΩ @VGS=10V.
RDS(ON)=85mΩ @VGS=4.5V.
-30V , -4.5A , RDS(ON)=80mΩ @VGS=-10V.
RDS(ON)=135mΩ @VGS=-4.5V.
Super high dense cell design for extremely low RDS(ON).
D1 D1 D2 D2
87 65
High power and current handing capability.
Surface Mount Package.
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous^a
-Pulsed
Drain-Source Diode Forward Current ^a
Maximum Power Dissipation ^a
Operating Junction and Storage
Temperature Range
Symbol N-Channel P-Channel Unit
VDS
30
-30
V
VGS
Ć20 Ć20
V
ID
Ć4.7 Ć4.5
A
IDM
Ć20 Ć20
A
IS
1.7 -1.7
A
PD
2.0
W
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
RįJA
62.5
C/W
5-7