CEM4269_10 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
40V, 6.1A, R_DS(ON) = 32mΩ @V_GS = 10V.
R_DS(ON) = 46mΩ @V_GS = 4.5V.
-40V, -5.2A, R_DS(ON) = 43mΩ @V_GS = 10V.
R_DS(ON) = 65mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
8
7
6
5
1
2
3
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Channel 1 Channel 2
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
-40
V_GS
±20
±20
Drain Current-Continuous
T_A=25 C
T_A=70 C
I_D
Drain Current-Pulsed ^a
I_DM
6.1
-5.2
4.9
-4.2
20
-20
Maximum Power Dissipation
T_A=25 C
T_A=70 C
Operating and Store Temperature Range
P_D
T_J,T_stg
2.0
1.28
-55 to 150
Units
V
V
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
C/W
Specification and data are subject to change without notice .
1
Rev 2. 2010.Aug
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