CEM4207 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEM4207
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-40V, -7A, R_DS(ON) = 30mΩ @V_GS = -10V.
R_DS(ON) = 40mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2
8
7
6
5
SO-8
1
1
2
3
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-40
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
-7
I_DM
-28
Maximum Power Dissipation
P_D
2
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Dec
http://www.cetsemi.com