CEM3178_10 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CEM3178
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 7.6A, R_DS(ON) = 22mΩ @V_GS = 10V.
R_DS(ON) = 33mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
8
7
6
5
SO-8
1
1
2
3
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
7.6
I_DM
30
Maximum Power Dissipation
P_D
2.0
Units
V
V
A
A
W
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
62.5
C/W
Specification and data are subject to change without notice .
1
Rev 3. 2010.Apr
http://www.cetsemi.com