CEM11C2 Datasheet, PDF (1/9 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V ,7A , RDS(ON)=30mΩ @VGS=10V.
RDS(ON)=42mΩ @VGS=4.5V.
-20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V.
RDS(ON)=120mΩ @VGS=-2.5V.
Super high dense cell design for extremely low RDS(ON).
D1 D1 D2 D2
87 65
High power and current handing capability.
Surface Mount Package.
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous^a @TJ=125 C
-Pulsed ^b
Drain-Source Diode Forward Current^a
Maximum Power Dissipation ^a
Operating Junction and Storage
Temperature Range
Symbol N-Channel P-Channel Unit
VDS
30
-20
V
VGS
Ć20 Ć8
V
ID
Ć 7 Ć4.3
A
IDM
Ć30 Ć17
A
IS
2.3 -4.3
A
PD
2.0
W
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
RįJA
62.5
C/W
5-148