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| CEK7002A Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor | |||
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CEK7002A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 0.3A, RDS(ON) = 6 ⦠@VGS = 10V.
RDS(ON) = 6 ⦠@VGS = 5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
TO-92 package.
G
GD S
TO-92
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
VGS
±20
Drain Current-Continuous
Drain Current-Pulsed a
ID
0.3
IDM
1.2
Maximum Power Dissipation
PD
1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
85
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Jan
http://www.cetsemi.com
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