CEK01N6G Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEK01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1A, R_DS(ON) = 9.3 Ω @V_GS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
D
TO-92(Bulk) & TO-92(Ammopack) package.
G
GD _S
GD _S
TO-92(Ammopack)
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^b
V_DS
600
V_GS
±30
I_D^a
0.4
I_DM
1.6
Maximum Power Dissipation
P_D
3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Lead
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2009.Nov.
http://www.cetsemi.com