CEK01N65 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEK01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 0.35A, R_DS(ON) = 10.5 Ω @V_GS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
D
TO-92(Bulk) & TO-92(Ammopack) package.
G
GD _S
GD _S
TO-92(Ammopack)
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
650
V_GS
±30
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
0.35
I_DM
1.4
Maximum Power Dissipation
P_D
3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Lead^b
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Feb
http://www.cetsemi.com