CEH2609 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor

CEH2609
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 3.5A, R_DS(ON) = 60mΩ @V_GS = 4.5V.
R_DS(ON) = 80mΩ @V_GS = 2.5V.
-20V, -2.5A, R_DS(ON) = 100mΩ @V_GS = -4.5V.
R_DS(ON) = 145mΩ @V_GS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1(6)
D2(4)
Lead free product is acquired.
Surface mount Package.
4
5
6
G1(1)
3
2
1
TSOP-6
G2(3)
S1(5)
S2(2)
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
20
V_GS
±12
I_D
3.5
I_DM
14
P-Channel
-20
±12
-2.5
10
Maximum Power Dissipation
P_D
1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
110
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2013.Mar
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