CEH2321_10 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEH2321
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -4.8A, R_DS(ON) = 55mΩ @V_GS = -4.5V.
R_DS(ON) = 62mΩ @V_GS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-20
V_GS
±12
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
-4.8
I_DM
-19.2
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice
1
Rev 3. 2010.Sep
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