CEH2310 Datasheet, PDF (1/2 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEH2310
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 6.2A , R_DS(ON) = 33mΩ @V_GS = 10V.
R_DS(ON) = 38mΩ @V_GS = 4.5V.
R_DS(ON) = 55mΩ @V_GS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
30
V_GS
±12
I_D
6.2
I_DM
25
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com