CEH2288 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , R_DS(ON) = 26mΩ @V_GS = 4.5V.
R_DS(ON) = 35mΩ @V_GS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
D1(2)
D2(5)
4
5
6
G1(6)
3
2
1
TSOP-6
G2(4)
S1(1)
S2(3)
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
±12
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
5.2
I_DM
20
Maximum Power Dissipation
P_D
1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.MARCH
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