CEG9926 Datasheet, PDF (1/5 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V.
RDS(ON)=40mΩ @VGS=2.5V.
D1 ₁
Super high dense cell design for extremely low RDS(ON).
S1 2
High power and current handing capability.
S1 3
TSSOP-8 for Surface Mount Package.
G1 4
8 D2
7 S2
6 S2
5 G2
G2
S2
S2
D2
G1
S1
ȀȀȀ
S1
D1
TSSOP-8
9
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
Ć8
V
Drain Current-Continuous^a
-Pulsed ^b
ID
Ć4.5
A
IDM
Ć25
A
Drain-Source Diode Forward Current ^a
IS
1.7
A
Maximum Power Dissipation ^a
PD
ȑȎȐ
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
RįJA
125
C/W
9-17