CEDF634 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEDF634/CEUF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
250V, 6.7A, R_DS(ON) = 450mΩ @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
D
G
G
G
D
S
S
CEU SERIES
CED SERIES
TO-252(D-PAK)
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
250
±30
6.7
26
46
0.37
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.7
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.January
6 - 138
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