CED85A3_08 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED85A3/CEU85A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 80A, R_DS(ON) = 6mΩ @V_GS = 10V.
R_DS(ON) = 9mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
G
S
G
DS
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
80
I_DM
320
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
70
0.56
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
E_AS
75
I_AS
12.3
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Jan.
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