CED83A3 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED83A3/CEU83A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 80A, R_DS(ON) = 6mΩ @V_GS = 10V.
R_DS(ON) = 9mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
G
S
G
DS
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
30
±20
80
350
70
0.56
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
Operating and Store Temperature Range
E_AS
I_AS
T_J,T_stg
875
35
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
50
Units
C/W
C/W
Rev 1. 2005.August
6 - 126
http://www.cetsemi.com