CED1012L Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED1012L/CEU1012L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
120V, 10A, R_DS(ON) = 120mΩ @V_GS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
D
G
G
S
G
DS
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
120
Gate-Source Voltage
V_GS
±20
Drain Current-Continuous
I_D
10
Drain Current-Pulsed ^a
I_DM
40
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
50
0.3
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Jan
http://www.cetsemi.com