CED02N6G Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED02N6G/CEU02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 2A, R_DS(ON) = 5Ω @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
D
G
G
S
G
DS
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
600
V_GS
±30
Drain Current-Continuous @ T_C = 25 C
@ T_C = 100 C
I_D
2
1.3
Drain Current-Pulsed ^a
I_DM
8
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
52
0.4
Single Pulsed Avalanche Energy ^e
E_AS
11.25
Single Pulsed Avalanche Current ^e
I_AS
1.5
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.4
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 5. 2011.Feb
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