CED01N6G Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CED01N6G/CEU01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1A, R_DS(ON) = 9.3Ω @V_GS = 10V.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
G
S
G
DS
CEU SERIES
CED SERIES
TO-252(D-PAK)
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
600
V_GS
±30
Drain Current-Continuous
I_D
Drain Current-Pulsed ^a
I_DM
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
P_D
1
4
31
0.25
Operating and Store Temperature Range
T_J,T_stg
-55 to 150
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2009.Jul.
http://www.cetsemi.com