CEC8218 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.5A, R_DS(ON) = 23mΩ @V_GS = 4.5V.
R_DS(ON) = 34mΩ @V_GS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
*1K
G1
*1K
G2
S1
*Typical value by design
8 76 5
Bottom View
DFN3*3
1 234
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
±12
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
6.5
I_DM
25
Maximum Power Dissipation
P_D
1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
D
S2
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
83
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.July
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