CEA6200 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEA6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 1.8A, R_DS(ON) = 250mΩ @V_GS = 10V.
R_DS(ON) = 330mΩ @V_GS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-89 package.
G
D
S
D
G
SOT-89
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
1.8
I_DM
7.2
Maximum Power Dissipation
P_D
1.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.June
http://www.cetsemi.com