CEA3252 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEA3252
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 5A, R_DS(ON) = 32mΩ @V_GS = 10V.
R_DS(ON) = 45mΩ @V_GS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-89 package.
G
D
S
D
G
SOT-89
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
30
V_GS
±20
I_D
5
I_DM
20
Maximum Power Dissipation
P_D
1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.June
http://www.cetsemi.com