CMLT3904E_15 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS

CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
MAX
fT
VCE=20V, IC=10mA, f=100MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
hie
VCE=10V, IC=1.0mA, f=1.0kHz
hre
VCE=10V, IC=1.0mA, f=1.0kHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V, IC=100μA, RS =1.0kΩ
f=10Hz to 15.7kHz
300
4.0
8.0
1.0
12
0.1
10
100
400
1.0
60
4.0
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
pF
kΩ
x10^-4
μS
dB
ns
ns
ns
ns
CMLT3904E
CMLT3904EG*
CMLT3906E
CMLT3906EG*
* Device is Halogen Free by design
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
CMLT3946E
CMLT3946EG*
R6 (29-June 2015)