CMLM8205 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE

CMLM8205
MULTI DISCRETE MODULE^™
SURFACE MOUNT
P-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL TEST CONDITIONS
MIN
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
gFS
VDS =10V, ID=200mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
ton, toff
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
MAX
1.5
0.15
1.3
2.5
4.0
3.0
5.0
7.0
70
15
20
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR
VR=10V
20
IR
VR=30V
100
BVR
IR=500μA
40
VF
IF=100μA
0.13
VF
IF=1.0mA
0.21
VF
IF=10mA
0.27
VF
IF=100mA
0.35
VF
IF=500mA
0.47
CT
VR=1.0V, f=1.0MHz
50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
ns
μA
μA
V
V
V
V
V
V
pF
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: C85
R1 (20-January 2010)