CMLM0605 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – MULTI DISCRETE MODULE™ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

Central^TM
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS Q1 (continued)
SYMBOL TEST CONDITIONS
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V,IC=100µA, RS =1.0KΩ,
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
ELECTRICAL CHARACTERISTICS D1 (TA=25°C)
IR
VR= 10V
IR
VR= 30V
BVR
IR= 500µA
VF
IF= 100µA
VF
IF= 1.0mA
VF
IF= 10mA
VF
IF= 100mA
VF
IF= 500mA
CT
VR= 1.0V, f=1.0 MHz
CMLM0605
M U LT I D I S C R E T E M O D U L E ^™
SURFACE MOUNT
LOW VCE _(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
MIN
MAX UNITS
100
400
1.0
60
µmhos
4.0
dB
35
ns
35
ns
200
ns
50
ns
20
µA
100
µA
40
V
0.13
V
0.21
V
0.27
V
0.35
V
0.47
V
50
pF
SOT-563 - MECHANICAL OUTLINE
D
A
B
E
E
6
5
4
G
F
1
2
3
C
H
R0
MARKING CODE: C65
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
R1 (22-February 2005)