TIP42 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP42
TIP42A
TIP42B
TIP42C
PNP SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP42 SERIES
types are PNP Epitaxial-Base Silicon Power
Transistors designed for power amplifier and high
speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
SYMBOL TIP41
VCBO 40
VCEO 40
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
TIP41A TIP41B TIP41C
60
80
100
60
80
100
5.0
6.0
10
2.0
65
2.0
-65 to +150
UNITS
V
V
V
A
A
A
W
W
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICEO
VCE=30V (TIP41, TIP41A)
ICEO
VCE=60V (TIP41B, TIP41C)
ICES
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=30mA (TIP41)
40
BVCEO
IC=30mA (TIP41A)
60
BVCEO
IC=30mA (TIP41B)
80
BVCEO
IC=30mA (TIP41C)
100
VCE(SAT) IC=6.0A, IB=0.6A
VBE(ON) VCE=4.0V, IC=6.0A
hFE
VCE=4.0V, IC=0.3A
30
hFE
VCE=4.0V, IC=3.0A
15
hfe
VCE=10V, IC=0.5A, f=1.0kHz
20
fT
VCE=10V, IC=0.5A, f=1.0MHz
3.0
ton
IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω
0.4
toff
IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω
0.7
MAX
0.7
0.7
0.4
1.0
1.5
2.0
75
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
μs
μs
R1 (13-December 2010)