TIP35_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS

TIP35 TIP35A TIP35B TIP35C NPN
TIP36 TIP36A TIP36B TIP36C PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP35 and TIP36
series devices are complementary silicon power
transistors manufactured by the epitaxial base process,
designed for high current amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-218 TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
TIP35
SYMBOL TIP36
VCBO 40
VCEO 40
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
TIP35A TIP35B TIP35C
TIP36A TIP36B TIP36C
60
80
100
60
80
100
5.0
25
40
5.0
125
-65 to +150
1.0
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=30V (TIP35, TIP35A, TIP36, TIP36A)
ICEO
VCE=60V (TIP35B, TIP35C, TIP36B, TIP36C)
ICES
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=30mA (TIP35, TIP36)
40
BVCEO
IC=30mA (TIP35A, TIP36A)
60
BVCEO
IC=30mA (TIP35B, TIP36B)
80
BVCEO
IC=30mA (TIP35C, TIP36C)
100
VCE(SAT) IC=15A, IB=1.5A
VCE(SAT) IC=25A, IB=5.0A
VBE(ON)
VCE=4.0V, IC=15A
VBE(ON)
VCE=4.0V, IC=25A
hFE
VCE=4.0V, IC=1.5A
25
hFE
VCE=4.0V, IC=15A
10
hfe
VCE=10V, IC=1.0A, f=1.0kHz
25
fT
VCE=10V, IC=1.0A, f=1.0MHz
3.0
MAX
1.0
1.0
0.7
1.0
1.8
4.0
2.0
4.5
100
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
MHz
R2 (18-July 2013)