TIP30 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP30
TIP30A
TIP30B
TIP30C
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP30 series devices
are silicon PNP epitaxial-base power transistors designed
for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL TIP30
Collector-Base Voltage
VCBO 40
Collector-Emitter Voltage
VCEO 40
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
TIP30A TIP30B TIP30C
60
80
100
60
80
100
5.0
1.0
3.0
0.4
30
2.0
-65 to +150
UNITS
V
V
V
A
A
A
W
W
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICEO
VCE=30V (TIP30, TIP30A)
ICEO
VCE=60V (TIP30B, TIP30C)
ICES
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=30mA (TIP30)
40
BVCEO
IC=30mA (TIP30A)
60
BVCEO
IC=30mA (TIP30B)
80
BVCEO
IC=30mA (TIP30C)
100
VCE(SAT) IC=1.0A, IB=125mA
VBE(ON)
VCE=4.0V, IC=1.0A
hFE
VCE=4.0V, IC=0.2A
40
hFE
VCE=4.0V, IC=1.0A
15
hfe
VCE=10V, IC=0.2A, f=1.0kHz
20
fT
VCE=10V, IC=0.2A, f=1.0MHz
3.0
ton
IC=1.0A, IB1= IB2=0.1A, RL=30Ω
0.3
toff
IC=1.0A, IB1= IB2=0.1A, RL=30Ω
1.0
MAX
0.3
0.3
0.2
1.0
0.7
1.3
75
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
μs
μs
R1 (12-March 2014)