PN918_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON RF TRANSISTOR

PN918
NPN SILICON RF TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN918 type
is an NPN silicon RF transistor, manufactured by
the epitaxial planar process and designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
30
15
3.0
50
625
1.0
-65 to +150
2.0
12.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=15V
BVCBO
IC=1.0μA
30
BVCEO
IC=3.0mA
15
BVEBO
IE=10μA
3.0
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
hFE
VCE=1.0V, IC=3.0mA
20
fT
VCE=10V, IC=4.0mA, f=100MHz
600
Cob
VCB=10V, IE=0, f=1.0MHz
Cob
VEB=0, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
Po
VCB=15V, IC=8.0mA, f=500MHz
30
Gpe
VCB=12V, IC=6.0mA, f=200MHz
15

VCB=15V, IC=8.0mA, f=500MHz
25
NF
VCE=6.0V, IC=1.0mA,
RG=400Ω, f=60kHz
MAX
10
0.4
1.0
1.7
3.0
2.0
6.0
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
V
V
V
V
V
MHz
pF
pF
pF
mW
dB
%
dB
R0 (11-September 2012)