PN4250A_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON PNP TRANSISTOR

PN4250A
SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN4250A is a
silicon PNP transistor designed for low level, low noise
amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JC
Θ_JA
60
60
60
5.0
500
625
-65 to +150
83.3
200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=50V
IEBO
VEB=3.0V
BVCBO
IC=10μA
60
BVCES
IC=10μA
60
BVCEO
IC=5.0mA
60
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=0.5mA
hFE
VCE=5.0V, IC=100μA
250
Cob
VCB=5.0V, f=1.0MHz
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
250
hie
VCE=5.0V, IC=1.0mA, f=1.0kHz
6.0
hoe
VCE=5.0V, IC=1.0mA, f=1.0kHz
5.0
hre
VCE=5.0V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V, IC=250μA, RS=1.0kΩ
f=1.0kHz, BW=150Hz
NF
VCE=5.0V, IC=20μA, RS=10kΩ
f=1.0kHz, BW=150Hz
MAX
10
20
0.25
700
6.0
800
20
50
10
2.0
2.0
UNITS
V
V
V
V
mA
mW
°C
°C/W
°C/W
UNITS
nA
nA
V
V
V
V
V
pF
kΩ
μS
x10^-4
dB
dB
R0 (26-July 2013)