PN4209_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

PN4209
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN4209 is a PNP
Silicon Transistor designed for high speed switching
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
15
15
4.5
200
625
-65 to +150
200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
VCE=8.0V
ICES
VCE=8.0V, TA=125°C
BVCBO
IC=100μA
15
BVCES
IC=100μA
15
BVCEO
IC=3.0mA
15
BVEBO
IE=100μA
4.5
VCE(SAT)
IC=1.0mA, IB=100μA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=1.0mA, IB=100μA
VBE(SAT)
IC=10mA, IB=1.0mA
0.69
VBE(SAT)
IC=50mA, IB=5.0mA
hFE
VCE=0.5V, IC=1.0mA
35
hFE
VCE=0.3V, IC=10mA
50
hFE
VCE=0.3V, IC=10mA, TA=-55°C
20
hFE
VCE=1.0V, IC=50mA
40
fT
VCE=10V, IC=10mA, f=100MHz
850
Cob
VCB=5.0V, IE=0
Cib
VBE=0.5V, IC=0
MAX
10
5.0
0.15
0.18
0.60
0.80
0.86
1.5
120
7.0
7.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
R0 (1-December 2011)